| PART |
Description |
Maker |
| IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State
GE Solid State
|
| IRF530_D ON0283 IRF530-D IRF530/D |
100V4A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管（N沟道增强型硅门）)
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| SSM3J13T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MTP5N20 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
|
| MTP10N25 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
|
| MRF1518T1 MRF1518NT1 |
RF Power Field Effect Transistor
|
MOTOROLA[Motorola, Inc]
|
| MTP10N35 MTP10N40 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| MTH6N60 MTH6N55 |
Power Field Effect Transistor
|
New Jersey Semi-Conduct...
|
| 27271SL |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MRFE6S9045NR1 CRCW12061001FKEA ATC100B470JT500XT 2 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| D84DN2 D84DM2 |
FIELD EFFECT POWER TRANSISTOR
|
New Jersey Semi-Conduct...
|
